1994. 3. 22
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA1268
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
LOW NOISE AMPLIFIER APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES
Low Noise.
: NF=3dB(Typ.), Rg=100 , V
CE
=-6V, I
C
=-100 A, f=1kHz
: NF=0.5dB(Typ.), Rg=1k , V
CE
=-6V, I
C
=-100 A, f=1kHz.
High DC Current Gain : h
FE
=200 700.
High Voltage : V
CEO
=-120V.
Low Pulse Noise. Low 1/f Noise.
Complementary to KTC3200.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
2. COLLECTOR
3. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification GR:200 400, BL:350 700
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-120
V
Collector-Emitter Voltage
V
CEO
-120
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-100
mA
Emitter Current
I
E
100
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-120V, I
E
=0
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-100
nA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA, I
B
=0
-120
-
-
V
DC Current Gain
h
FE
(Note)
V
CE
=-6V, I
C
=-2mA
200
-
700
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-10mA, I
B
=-1mA
-
-
-0.3
V
Base-Emitter Voltage
V
BE
V
CE
=-6V, I
C
=-2mA
-
-0.65
-
V
Transition Frequency
f
T
V
CE
=-6V, I
C
=-1mA
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
4.0
-
pF
Noise Figure
NF
V
CE
=-6V, I
C
=-100 A, f=10Hz, Rg=10k
-
-
6.0
dB
V
CE
=-6V, I
C
=-100 A, f=1kHz, Rg=10k
-
-
2.0
V
CE
=-6V, I
C
=-100 A f=1kHz, Rg=100
-
3.0
-
1994. 3. 22
2/2
KTA1268
Revision No : 0
h
(x
k
)
ie
re
h (x10 )
-5
h (x10
)
re
-5
COLLECTOR CURRENT I (
A)
NF - R , I
g
SIGNAL SOURCE RESISTANCE R (
)
C
h PARAMETER - V
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
-1
5
h PARAMETER
10
10
h PARAMETER
1
100
30
10
EMITTER CURRENT I (
A)
E
E
h PARAMETER - I
NF - R , I
C
g
C
COLLECTOR CURRENT I (
A)
-10
100
g
SIGNAL SOURCE RESISTANCE R (
)
10
-100
-1k
-10k
1k
10k
100k
V =-6V
CE
f=10Hz
NF=1dB
2
3
4
6
8
12
12
10
10
C
g
10
100
-100
-10
-1k
-10k
1k
10k
100k
COMMON EMITTER
V =-6V
f=1kHz
CE
NF=1d
B
2
3
4
6
8
10
12
NF=1
dB
2
3
4
6
8
10
12
50
DC CURRENT GAIN h
FE
100
-0.1
COLLECTOR CURRENT I (mA)
C
C
FE
h - I
-0.3
-1
-3
-10
-50
300
500
1k
3k
5k
COMMON EMITTER
V =-6V
Ta=25 C
CE
Ta=25 C
Ta=-25 C
Ta=100 C
100
300
1k
3k
10k
3
5
30
50
300
500
1k
COMMON
EMITTER
V =-6V
f=270Hz
Ta=25 C
CE
h
fe
h (x
)
oe
-3
-5
-10
-30 -50
-100
30
50
100
300
500
700
COMMON EMITTER
I =1mA
f=270Hz
Ta=25 C
E
fe
h
oe
h (x
)
h (xk
)
ie
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